collector-emitter voltage v ce 1200 v dc collector current tc=70c, tvj=175c tc=25c,tvj=175c i c , nom ic 200 295 a repetitive peak collector current tp=1msec,tc=80c i crm 400 a total power dissipation tc=25c p tot 2380 w gate-emitter peak voltage v ges +/-20 v dc forward diode current i f 200 a repetitive peak forward current tp=1msec i frm 400 a i 2 t value per diode vr=0v, tp=10msec, tvj=125c i 2 t 7800 a 2 sec isolation voltage rms, 50hz, t=1min v isol 2500 v attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -aln isolation -trench gate igbts maximum rated values/electrical properties SML200HB12 collector-emitter saturation voltage ic=200a,vge=15v, tc=25c ic=200a,vge=15v,tc=125c v ce(sat) 1.7 2.0 2.15 v gate threshold voltage ic=8ma,vce=vge, tvj=25c vge (th) 5.0 5.8 6.5 v input capacitance f=1mhz,tvj=25c,vce=25v, vge=0v c ies 14 nf reverse transfer capacitance f=1mhz,tvj=25c,vce=25v, vge=0v c res 0.5 nf collector emitter cut off current vce=1200v,vge=0v,tvj=25c i ces 1 5 ma gate emitter cut off current vce=0v,vge=20v,tvj=25c i ges 400 na
turn on delay time ic=200a, vcc=600v vge=+/15v,rg=3.6 ? ,tvj=25c vge=+/-15v,rg=3.6 ? ,tvj=125c t d,on 250 300 nsec nsec nsec rise time ic=200a, vcc=600v vge=+/-15v,rg=3.6 ? ,tvj=25c vge=+/-15v,rg=3.6 ? ,tvj=125c tr 90 100 nsec nsec nsec turn off delay time ic=200a, vcc=600v vge=+/-15v,rg=3.6 ? ,tvj=25c vge=+/-15v,rg=3.6 ? ,tvj=125c t d , off 550 650 nsec nsec nsec fall time ic=200a, vcc=600v vge=+/-15v,rg=3.6 ? ,tvj=25c vge=+/-15v,rg=3.6 ? ,tvj=125c t f 130 180 nsec nsec nsec turn on energy loss per pulse ic=200a,vce=600v,vge=+/-15v rge=3.6 ? ,l=30nh tvj=25c di/dt=6000a/sec tvj=125c e on 15 mj mj turn off energy loss per pulse ic=200a,vce=600v,vge=+/-15v rge=3.6 ? ,l=30nh tvj=25c di/dt=4000a/sec tvj=125c e off 35.0 mj mj sc data tp 10sec, vge 15v vcc=900v, vce (max)= vces-l di/dt tvj=125c i sc 800 a stray module inductance l ce 20 nh terminal-chip resistance r c 0.7 m ? forward voltage ic=200a,vge=0v, tc=25c ic=200a,vge=0v, tc=125c v f 1.65 1.65 2.15 v v peak reverse recovery current if=200a, -di/dt=2000a/sec vce=600v,vge=-15v,tvj=25c vce=600v,vge=-15v,tvj=125c i rm 150 190 a a recovered charge if=200a, -di/dt=2000a/sec vce=600v,vge=-15v,tvj=25c vce=600v,vge=-15v,tvj=125c qr 20 36 c c reverse recovery energy if=200a, -di/dt=2000a/sec vce=600v,vge=-15v,tvj=25c vce=600v,vge=-15v,tvj=125c e rec 9 17 mj mj diode characteristics
thermal resistance junction to case igbt diode r j-c 0.063 0.11 k/w thermal resistance case to heatsink r c-hs 0.03 k/w maximum junction temperature tvj 175 c maximum operating temperature top -55 175 c storage temperature tstg -55 175 c thermal properties min typ max
circuit diagram
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